Deal-Grove Oxidation Law
a theory of oxidation formulated by Bruce Deal and Andy Grove describing oxidation of silicon. The theory basically states that initially the oxidant reacts directly with the silicon surface and the reaction rate determines the oxide growth rate, as oxidation proceeds, a layer of oxide forms and at a sufficient thickness the oxidant must diffuse through the oxide to react with silicon, and the diffusion rate controls the rate of oxide growth, i.e., diffusion is slower than the surface reaction rate. | ||||
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